中国科学技术大学自旋电子材料与器件实验室--自旋电子材料与器件实验室-- H. Wang, H. Wu, Y. Liu, P. Li, W. Zhao, et al., Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdw heterostructure,

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H. Wang, H. Wu, Y. Liu, P. Li, W. Zhao, et al., Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdw heterostructure,

发布时间：2024-04-23点击次数：

DOI码：
10.48550/arXiv.2111.14128
发表刊物：
arXiv preprint arXiv
摘要：
The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high heretointegrability, which is expected to promote the development of Moore's Law continuously. However, it is extremely challenging to realize magnetic switching with ultra-low power consumption at room temperature. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in a well-epitaxial all-van der Waals (vdW) heterostructure. The topological insulator Bi2Te3 not only helps to elevate the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing to switch FGT at a low current density of 2.2 * 106 A cm2. A large SOT efficiency of 0.7 is measured at room temperature, and the thickness of FGT is further adjusted to reduce the influence of the thermal contribution on the second-harmonic signal. Furthermore, the temperature and thickness-dependent SOT efficiency prove that the large SOT in our system mainly originates from the nontrivial origin of topological materials. Our experiment has enabled an all-vdW SOT structure and lays a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.
论文类型：
期刊论文
是否译文：
否
发表时间：
2021-11-28

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