中国科学技术大学自旋电子材料与器件实验室--自旋电子材料与器件实验室-- Wang H, Lu H, Guo Z, et al. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature[J]. Nature Communications, 2023, 14(1): 2483.

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Wang H, Lu H, Guo Z, et al. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature[J]. Nature Communications, 2023, 14(1): 2483.

发布时间：2024-04-23点击次数：

发表刊物：
Nature communications
摘要：
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.
论文类型：
期刊论文
卷号：
14
期号：
1
页面范围：
2483
是否译文：
否
发表时间：
2023-04-29
发布期刊链接：
https://doi.org/10.1038/s41467-023-37917-8

上一条：Alahmed L, Nepal B, Macy J, et al. Magnetization and Spin Dynamics in Two-Dimensional Magnets[C]//2023 IEEE International Magnetic Conference-Short Papers (INTERMAG Short Papers). IEEE, 2023: 1-2. 下一条：Li R, Riddiford L J, Chai Y, et al. A puzzling insensitivity of magnon spin diffusion to the presence of 180-degree domain walls[J]. Nature Communications, 2023, 14(1): 2393.