中国科学技术大学自旋电子材料与器件实验室--自旋电子材料与器件实验室-- X. Zhang, S. C. Ambhire, Q. Lu, P. Li*, et al., Giant topological hall effect in van der Waals heterostructures of CrTe2/Bi2Te3

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X. Zhang, S. C. Ambhire, Q. Lu, P. Li*, et al., Giant topological hall effect in van der Waals heterostructures of CrTe2/Bi2Te3

发布时间：2024-04-23点击次数：

DOI码：
10.1021/acsnano.1c05519
发表刊物：
ACS Nano
摘要：
Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii–Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin–orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μΩ·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.
论文类型：
期刊论文
卷号：
15
期号：
10
页面范围：
15710–15719
是否译文：
否
发表时间：
2021-08-30