中国科学技术大学自旋电子材料与器件实验室--自旋电子材料与器件实验室-- Wang H, Wu H, Zhang J, et al. Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators[J]. Nature communications, 2023, 14(1): 5173.

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Wang H, Wu H, Zhang J, et al. Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators[J]. Nature communications, 2023, 14(1): 5173.

发布时间：2024-04-23点击次数：

发表刊物：
Nature communications
摘要：
Two-dimensional (2D) ferromagnetic materials with unique magnetic properties have great potential for next-generation spintronic devices with high flexibility, easy controllability, and high heretointegrability. However, realizing magnetic switching with low power consumption at room temperature is challenging. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in an all-van der Waals (vdW) heterostructure using an optimized epitaxial growth approach. The topological insulator Bi2Te3 not only raises the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing the FGT to switch at a low current density of ~2.2×106 A/cm2. The SOT efficiency is ~2.69, measured at room temperature. The temperature and thickness-dependent SOT efficiency prove that the larger SOT in our system mainly originates from the nontrivial topological origin of the heterostructure. Our experiments enable an all-vdW SOT structure and provides a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.
论文类型：
期刊论文
卷号：
14
期号：
1
页面范围：
5173
是否译文：
否
发表时间：
2023-08-24
发布期刊链接：
https://doi.org/10.1038/s41467-023-40714-y.

上一条：Zheng D, Fang Y W, Wen Y, et al. Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction[J]. Advanced Functional Materials, 2024: 2312746. 下一条：Zhang R, Tang C, Sun X, et al. Sky-TCAM: Low-Power Skyrmion-Based Ternary Content Addressable Memory[J]. IEEE Transactions on Electron Devices, 2023.