中国科学技术大学自旋电子材料与器件实验室--自旋电子材料与器件实验室-- Zheng D, Fang Y W, Wen Y, et al. Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction[J]. Advanced Functional Materials, 2024: 2312746.

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Zheng D, Fang Y W, Wen Y, et al. Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction[J]. Advanced Functional Materials, 2024: 2312746.

发布时间：2024-04-23点击次数：

发表刊物：
Advanced Functional Materials
摘要：
Spin-orbit torque resulting from non-magnetic materials with strong spin-orbit coupling enables electrically controlled magnetization switching, offering potential applications in ultralow-power memory and logic devices. However, such switching of perpendicular magnetization usually requires an in-plane magnetic field along the applied current direction, which limits its use. To address this challenge, an all-oxide superlattice is designed and fabricated that show both the perpendicular magneto-crystalline anisotropy and in-plane magnetic anisotropies induced by interfacial engineering. The results demonstrate that the coexistence of perpendicular and in plane magnetic anisotropy breaks the symmetry and thus enables the pure electrical switching of perpendicular magnetization.
论文类型：
期刊论文
页面范围：
2312746
是否译文：
否
发表时间：
2024-02-01
发布期刊链接：
https://doi.org/10.1002/adfm.202312746

上一条：Li Z, Zhang R, Shan J, et al. Electrostatic Gating of Spin Dynamics of a Quasi-2D Kagome Magnet[J]. Nano Letters, 2024. 下一条：Wang H, Wu H, Zhang J, et al. Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators[J]. Nature communications, 2023, 14(1): 5173.